These have a region of operation showing negative resistance caused by quantum tunneling,allowing amplification of signals and very simple bistable circuits. Due to the high carrier concentration, tunnel diodes are very fast, may be used at low (mK) temperatures, high magnetic fields, and in high radiation environments.Because of these properties, they are often used in spacecraft.
Part Nnmber | Manufacturer | Description |
---|---|---|
1N2927 | ASI[Advanced Semiconductor] | GERMANIUM TUNNEL DIODE |
ASTD | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-1020-51 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-1020-820 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-1020-860 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-2030-51 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-2030-820 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-2030-860 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-3040-51 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-3040-820 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-3040-860 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-4050-51 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-4050-820 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-4050-860 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-5060-51 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-5060-820 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
ASTD-5060-860 | ASI[Advanced Semiconductor] | PLANAR TUNNEL (BACK) DIODE |
1N4394 | Solid States Devices, | SILICON TUNNEL DIODE |
1N4394A | Solid States Devices, | SILICON TUNNEL DIODE |
1N4395 | Solid States Devices, | SILICON TUNNEL DIODE |
1N4395A | Solid States Devices, | SILICON TUNNEL DIODE |
1N3717 | Optoelectronic Devices | (1N3712 1N3721) TUNNEL DIODE |
1N3712 | Optoelectronic Devices | (1N3712 1N3721) TUNNEL DIODE |